|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
June 2002 AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -15A RDS(ON) < 7m (VGS = -20V) RDS(ON) < 8.5m (VGS = -10V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 25 -15 -12.8 -80 3 2.1 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 26 50 14 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4413 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, ID=-15A Static Drain-Source On-Resistance TJ=125C VGS=-10V, ID=-15A VGS=-6V, ID=-10A VDS=-5V, ID=-15A -1.5 60 5.8 7.2 7.2 10.4 38 -0.72 -1 -4.2 7 8.7 8.5 -2.6 Min -30 -1 -5 100 -3.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC gFS VSD IS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 5034 1076 829 2.5 78 15.2 23.6 17.5 19.5 49 30.5 43 38 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, ID=-15A VGS=-10V, VDS=-15V, RL=1.0, RGEN=3 IF=-15A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. -15 B: Repetitive rating, pulse width limited by junction temperature. -12.8 C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 -10V 40 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 12 Normalized On-Resistance VGS=-6V 10 RDS(ON) (m) 1.6 ID=-15A 1.4 VGS=-20V 1.2 VGS=-10V VGS=-4V 5 0 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -5V -6V -4.5V -ID(A) 20 15 10 25C 125C 30 25 VDS=-5V -ID (A) 8 VGS=-10V 6 VGS=-20V 4 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 24 20 RDS(ON) (m) 16 12 8 4 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=-15A 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -12.8 -15 1.0E+01 1.0E+00 1.0E-01 125C -IS (A) 125C 1.0E-02 1.0E-03 1.0E-04 25C 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 10 20 30 40 50 60 70 80 -Qg (nC) Figure 7: Gate-Charge Characteristics 8000 VDS=-15V ID=-15A Capacitance (pF) 7000 6000 5000 4000 3000 2000 1000 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss 100.0 RDS(ON) limited -ID (Amps) 10.0 100s 1ms Power (W) 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 10s 40 TJ(Max)=150C TA=25C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1 -15 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse -12.8 PD 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 Alpha & Omega Semiconductor, Ltd. ALPHA & OMEGA SEMICONDUCTOR, INC. SOP-8 Package Data DIMENSIONS IN MILLIMETERS SYMBOLS DIMENSIONS IN INCHES A A1 A2 b c D E1 e E h L aaa MIN 1.45 0.00 --- 0.33 0.19 4.80 3.80 5.80 0.25 0.40 --- 0 NOM 1.50 --- 1.45 --- --- --- --- 1.27 BSC --- --- --- --- --- MAX 1.55 0.10 --- 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8 MIN 0.057 0.000 --- 0.013 0.007 0.189 0.150 0.228 0.010 0.016 --- 0 NOM 0.059 --- 0.057 --- --- --- --- 0.050 BSC --- --- --- --- --- MAX 0.061 0.004 --- 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8 NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN LOGO 4 4 1 3 FAYWLC NOTE: LOGO 4413 F A Y W LC - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SOP-8 PART NO. CODE UNIT: mm PART NO. AO4413 CODE 4413 Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Tape and Reel Data SO-8 Reel SO-8 Tape Leader / Trailer & Orientation |
Price & Availability of AO4413 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |